Temperature dependant switching effect of the conductivity channel in the silicon MOS structures with thin Fe3O4 films


2012

Балашев В. В., Викулов В. А., Димитриев А. А., Коробцов В. В., Писаренко Т. А.

Тезисы

The 10th Japan-Russia Seminar on Semiconductor Surfaces Together with Asian Countries. Abstracts. T

Japan, Hongo, Tokyo, University of Tokyo

G-4

pp. 1

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0

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Vikulov V. A., Balashev V. V., Pisarenko T. A., Dimitriev A. A., Korobtsov V. V. Temperature dependant switching effect of the conductivity channel in the silicon MOS structures with thin Fe3O4 films // The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-10), Tokyo, Japan, 2012. G-4.