Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications


2015

Галкин К. Н., Галкин Н. Г., Горошко Д. Л., Чернев И. М., R. Faigar, T.H. Stuchlikova, J. Stuchlok, Z. Remes

Доклады

Japanese Journal of Applied Physics Conference Proceedings

The Japan Society of Applied Physics

V.3

011104(1-8)

N.G. Galkin, K.N. Galkin, I.M. Chernev, R. Faigar, T.H. Stuchlikova, J. Stuchlok, Z. Remes. Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications // JJAP Conf. Proceed., 3 (2015) 011104(1-8).

Eng