Low-temperature conducting channel switching in hybrid Fe3O4/SiO2/n-Si structures


2016

Балашев В. В., Викулов В. А., Димитриев А. А., Коробцов В. В., Писаренко Т. А.

Статьи в журналах

Materials Science and Engineering: B

The Netherlands, Amsterdam, Elsevier

B, 2016. Vol. 211.

P.33-36

2,331

2,331

0921-5107

Vikulov V.A., Dimitriev A.A., Balashev V.V., Pisarenko T.A., Korobtsov V.V. Low-temperature conducting channel switching in hybrid Fe3O4/SiO2/n-Si structures // Materials Science and Engineering: B, 2016. Vol. 211. P.33-36.

The carrier transport properties of the polycrystalline magnetite (Fe3O4) films grown on an n-type Si substrate with 5 nm-thick SiO2 have been investigated between 80 and 300 K in current-in-plane geometry. It was established that at temperature decrease to about 120 K, the resistivity of thin Fe3O4 films increases up to a peak value and then abruptly drops. This process is attended by a change in the shape of the current-voltage characteristics from the linear at 300 K to the S-type at 80 K. The observed peculiarities are explained by conducting channel switching from the Fe3O4 film to the Si substrate via the field-assisted tunneling of carriers through the composite insulating layer consisting of highly resistive Fe3O4 and tunnel SiO2. (C) 2016 Elsevier B.V. All rights reserved.

10.1016/j.mseb.2016.05.014

MSEB-211-16-33.pdf