Atomic structure and electronic properties of the Si(111)√3×√3-(Tl, A) (A = Group IV, V, VI) compounds


2016

Бондаренко Л. В., Грузнев Д. В., Зотов А. В., Матецкий А. В., Саранин А. А., Тупчая А. Ю., I.A. Kibirev, C.M. Wei, C.R. Hsing, A.N. Mihalyuk

Тезисы

Abstracts of 2-nd Asia-Pacific Symposium on Solid Surfaces (APSSS-2), November 13-16, 2016, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan

Taiwan, Taipei: IAMS, Academia Sinica

P. 7.

A.A. Saranin, A.V. Matetskiy, I.A. Kibirev, D.V. Gruznev, L.V. Bondarenko, A.Y. Tupchaya, C.M. Wei, C.R. Hsing, A.N. Mihalyuk, A.V. Zotov. Atomic structure and electronic properties of the Si(111)√3×√3-(Tl, A) (A = Group IV, V, VI) compounds // Abstracts of 2-nd Asia-Pacific Symposium on Solid Surfaces (APSSS-2), November 13-16, 2016, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan. Taipei: IAMS, Academia Sinica, 2016, P. 7.