ИАПУ ДВО РАН
  1. Главная
  2. Публикации
  3. Electronic and atomic structure of 2D In-Tl layer on Si(111)

Electronic and atomic structure of 2D In-Tl layer on Si(111)

2015

Доклады

Proceedings of Third Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2015), Vladivostok, Russia, August 19–26, 2015.

Vladivostok: Dalnauka

978-5-8044-1556-4

L.V. Bondarenko, A.V. Matetskiy, A.Y. Tupchaya, D.V. Gruznev, A.V. Zotov, A.A. Saranin. Electronic and atomic structure of 2D In-Tl layer on Si(111) // Proceedings of Third Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2015), Vladivostok, Russia, August 19–26, 2015. Vladivostok: Dalnauka, 2015, P.72-73