ИАПУ ДВО РАН

Al-Au 2D compound layer on Si(111) surface


2015

Материалы / тезисы конференций

The 15th International Conference on the Formation of Semiconductor Interfaces (ICFSI-15), November 15-20, 2015, Hiroshima, Japan

Japan. Hiroshima: Hiroshima University

A.Y. Tupchaya, L.V. Bondarenko, A. V. Matetskiy, E.N. Chukurov, C.-R. Hsing, C.-M. Wei, S.V. Eremeev, D.V. Gruznev, A.V. Zotov, A.A. Saranin. Al-Au 2D compound layer on Si(111) surface // The 15th International Conference on the Formation of Semiconductor Interfaces (ICFSI-15), November 15-20, 2015, Hiroshima, Japan. Hiroshima: Hiroshima University, 2015, P. 100