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Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties.

2018

Surface Science, Q3

Статьи в журналах

Surface Science

Netherlands. Amsterdam: Elsevier Science BV

Vol. 668

1,997

A.N. Mihalyuk, L.V. Bondarenko, A.Y. Tupchaya, D.V. Gruznev, J.P. Chou, C.R. Hsing, C.M. Wei, A.V. Zotov, A.A. Saranin. Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties. Surface Science, 2018, Vol. 668, P. 17-22.

https://doi.org/10.1016/j.susc.2017.10.010