ИАПУ ДВО РАН

Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties.


2018

Surface Science, Q3

Article

Surface Science

Elsevier Science BV, Amsterdam: Netherlands.

Vol. 668

1,997

A.N. Mihalyuk, L.V. Bondarenko, A.Y. Tupchaya, D.V. Gruznev, J.P. Chou, C.R. Hsing, C.M. Wei, A.V. Zotov, A.A. Saranin. Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties. Surface Science, 2018, Vol. 668, P. 17-22.

https://doi.org/10.1016/j.susc.2017.10.010