ИАПУ ДВО РАН

Formation of Mg2Si at high temperatures by fast deposition of Mg on Si(111) with wedge-shaped temperature distribution


2018

Applied Surface Science, Q1

Article

Applied Surface Science

Elsevier

Applied Surface Science, 439 (2018) 282-284

4.439

0169-4332

Gouralnik A. S. et al. Formation of Mg2Si at high temperatures by fast deposition of Mg on Si (111) with wedge-shaped temperature distribution //Applied Surface Science. – 2018. – Т. 439. – С. 282-284.

Two films grown by fast deposition of Mg on Si(111) surfaces with temperature distributions within 365–395 C and 545– 609 C were studied by Raman spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atom force microscopy (AFM). The film grown at 365–395 C contains crystalline textured Mg2Si. The mechanism of Mg2Si formation at high temperature is considered. The role of a Mg atom lifetime before evaporation from the Si surface at high temperatures is emphasized. The crucial requirement for the Mg2Si growth at high temperatures is a sufficiently high deposition rate providing condensation of Mg on the surface and further formation of the silicide.

https://doi.org/10.1016/j.apsusc.2017.12.237

https://www.sciencedirect.com/science/article/abs/pii/S0169433217338898