Head of the Center - Corresponding Member of RAS A.A. Saranin
Main research directions
Experimental investigations of the composition, atomic and electronic structure of the surfaces of solid bodies, thin films and low-dimensional structures on semiconductor and dielectric substrates; the conductivity, mobility and concentration of carriers in such systems, as well as their optical properties, structure and morphology both in ultra-high vacuum and in the open air. Research into the formation processes, structure and properties of submonolayer films (surface phases) of adsorbates on the surface of semiconductor crystals.
Analytical equipment
The Center has more than ten ultra-high vacuum installations for investigating the structure and properties of solid bodies.
Principal investigation methods are as follows:
- Auger electronic spectroscopy.
- Low-energy electron diffraction.
- High-energy electron diffraction.
- Scanning tunnel microscopy.
- Atomic force microscopy.
Principal results
- Ordered magic cluster arrays of Al on Si(111)7x7 and of In on Si(100)2x1 have been found.
- The phenomenon of In magic cluster doping on Si(100) has been discovered.
- An array of nanoelements in the form of silicon nanotubes doped by beryllium atoms which appeared as a result of the interaction between beryllium and Si(111) surface has been found.
- Low-temperature phase changes in Tl/Si(100) and Tl/Ge(100) systems were discovered.
- A research was made into molecular beam epitaxy of silicon on Fe disilicide islands formed on the surface of Si(111)7x7 and Si(100)2x1 at 600-800 C. Optimal growth temperature (700 C) on the surface of Si(100) has been determined and data on the structure of silicon and embedded -FeSi2 nanocrystallites (NCs) for the both surfaces have been obtained.
- Phonon structure of ingrown multi-layer samples has been investigated on the basis of the analysis of 2-phonon and 3-phonon resonances in silicon and Mg2Si.
- An investigation has been made into the morphology, optical properties, crystal and electronic structure of monocrystal silicon after plasma treatment depending on the initial tension of the magnetoplasma compressor (MPC). First data have been obtained on electronic structure parameters and parametric variations in the crystal structure of silicon after its treatment with plasma flux.