ИАПУ ДВО РАН

Balagan Semyon Anatoljevich

Position: junior scientific employee

Department: Лаборатория функциональных материалов и систем фотоники (№24)

Room: 334

Phone: 2-32-06-82

Email: balagan@iacp.dvo.ru

Publications:

Article Tezis

2018. Semyon A Balagan et al 2018 J. Phys.: Condens. Matter 30 245301
2017. Shevlyagin A. V. et al. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μ W emission power at 1.5 μ m //Journal of Applied Physics. – 2017. – Т. 121. – №. 11. – С. 113101.
2015. V.N. Davydova, A.V. Volod’ko, E.V. Sokolova, E.A. Chusovitin, S.A. Balagan, V.I. Gorbach, N.G. Galkin, I.M. Yermak, T.F. Solov’eva. The supramolecular structure of LPS-chitosan complexes of varied composition in relation to their biological activity // Carbohydrate Polymers, 123 (2015) 115-121.
2024.
2014. Soluble Chitosan-Carrageenan Polyelectrolyte Complexes and Their Gastroprotective Activity
2017. Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ε-FeSi nanocrystals is formed on the surface, sometimes β and ε phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ε-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2_NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 µW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.
2015. Yu. V. Lunyakov and S. A. Balagan. Bulk moduli of the silicon and germanium fullerenes Si60 and Ge60 Physics of the Solid State, Vol. 57, No. 6, 2015, P. 1073-1078
2013. Chusovitin E. et al. Electroluminescence properties of p‐Si/β‐FeSi2 NCs/…/n‐Si mesa diodes with embedded multilayers of β‐FeSi2 nanocrystallites //physica status solidi (c). – 2013. – Т. 10. – №. 12. – С. 1850-1853.
2022.
2018. Goroshko D. et al. Thermoelectric properties of nanostructured material based on Si and GaSb //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 102-109.
2020. Goroshko D. L. et al. Formation and thermoelectric properties of the n-and p-type silicon nanostructures with embedded GaSb nanocrystals //Japanese Journal of Applied Physics. – 2020. – Т. 59. – №. SF. – С. SFFB04.