ИАПУ ДВО РАН

Dotsenko Sergey Andreevich

Degree: PhD (Phys.-Math.)

Position: scientific employee

Department: Лаборатория оптики и электрофизики (№105)

Room: 329

Phone: 2-32-06-82

Internal Phone: 2-68

Email: docenko@iacp.dvo.ru

Publications:

Article Chapter Tezis

2015. Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
2020. Goroshko D. L. et al. Formation and thermoelectric properties of the n-and p-type silicon nanostructures with embedded GaSb nanocrystals //Japanese Journal of Applied Physics. – 2020. – Т. 59. – №. SF. – С. SFFB04.
2015. N. G. Galkin, D. A. Bezbabnyi, K. N. Galkin, S. A. Dotsenko, I. M. Chernev, and A. V. Vakhrushev. Chapter 15: “Formation, Optical and Electrical Properties of Ca3Si4 Films and Si/Ca3Si4/Si(111) Double Heterostructures” in the book “Multifunctional Materials and Modeling”, Editors: M.A. Korepanov, A.M. Lipanov, 06/2015: chapter 15: pages 141-150; Apple Academic Press., ISBN: 9781771880879.
2019. Chusovitin E. et al. Embedding of iron silicide nanocrystals into monocrystalline silicon: suppression of emersion effect //Asia-Pacific Conference on Fundamental Problems of Opto-and Microelectronics 2017. – International Society for Optics and Photonics, 2019. – Т. 11024. – С. 1102402.
2013. Gouralnik A. S. et al. Brief observe on iron silicide growth on amorphous silicon //Physica status solidi (c). – 2013. – Т. 10. – №. 12. – С. 1742-1745.
2017. -
2018. Gouralnik A. S. et al. Formation of Mg2Si at high temperatures by fast deposition of Mg on Si (111) with wedge-shaped temperature distribution //Applied Surface Science. – 2018. – Т. 439. – С. 282-284.
2019. Galkin N. G. et al. Conductive CaSi2 transparent in the near infra-red range //Journal of Alloys and Compounds. – 2019. – Т. 770. – С. 710-720.
2018. Goroshko D. et al. Thermoelectric properties of nanostructured material based on Si and GaSb //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 102-109.
2017. Galkin N. G. et al. Study of optical and luminescence properties of silicon—semiconducting silicide—silicon multilayer nanostructures //EPJ Web of Conferences. – EDP Sciences, 2017. – Т. 132. – С. 02006.
2017. Shevlyagin A. V. et al. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μ W emission power at 1.5 μ m //Journal of Applied Physics. – 2017. – Т. 121. – №. 11. – С. 113101.
2017. Chusovitin E. A. et al. GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon //Scripta Materialia. – 2017. – Т. 136. – С. 83-86.
2018. Chusovitin E. et al. Formation of a thin continuous GaSb film on Si (001) by solid phase epitaxy //nanomaterials. – 2018. – Т. 8. – №. 12. – С. 987.
2019.
2017. Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ε-FeSi nanocrystals is formed on the surface, sometimes β and ε phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ε-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2_NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 µW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.
2017. Goroshko D. L. et al. Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure //AIP Conference Proceedings. – AIP Publishing LLC, 2017. – Т. 1874. – №. 1. – С. 030015.