ИАПУ ДВО РАН

Subbotin Evgeniy Yu.

Degree: PhD (Phys.-Math.)

Position: senior scientific employee

Department: Лаборатория функциональных материалов и систем фотоники (№24)

Room: 332

Internal Phone: 2-68

Email: subbotineu@iacp.dvo.ru

Publications:

Article Tezis

2019. Galkin N. G. et al. Conductive CaSi2 transparent in the near infra-red range //Journal of Alloys and Compounds. – 2019. – Т. 770. – С. 710-720.
2021. Galkin N. G. et al. Multilayer Heterostructures with Embedded CrSi2 and β-FeSi2 Nanocrystals on Si (111) Substrate: From the Formation to Photoelectric Properties //Solid State Phenomena. – Trans Tech Publications Ltd, 2020. – Т. 312. – С. 45-53.
2020. Goroshko D. L. et al. Formation and thermoelectric properties of the n-and p-type silicon nanostructures with embedded GaSb nanocrystals //Japanese Journal of Applied Physics. – 2020. – Т. 59. – №. SF. – С. SFFB04.
2022. N.G. Galkin, K.N. Galkin, A.V. Tupkalo, E.Yu. Subbotin, I.M. Chernev, A.V. Shevlyagin and V.V. Khovailo, Physics of the Solid State, 2022, Vol. 64, No. 12, pp. 616–623
2020. Goroshko D. et al. Dissolution suppression of self-assembled GaSb quantum dots on silicon by proper surface preparation //Semiconductor Science and Technology. – 2020. – Т. 35. – №. 10. – С. 10LT01.
2022. Transparent conducting materials (TCMs) provide low cost and effective solution for the modern optoelectronics. However, simultaneous high electrical conductivity and optical transparency in the near-infrared (NIR) and middle-infrared (MIR) spectral ranges remain challenging. This study proposes thin film of the semimetal calcium disilicide (CaSi2) with hR6 polymorph modification to fill this niche. Investigation of the electrical, magnetoresistance and magnetic properties shed light on its semimetal behavior. CaSi2 film grown on Si substrate demonstrates competitive electrical and optical properties from the NIR to MIR ranges compared to commonly used TCMs reaching maximum transmittance of 47% at an important telecommunication wavelength of 1550 nm in addition to the low sheet resistance of 6.6 Ω/sq, which results in high TCM figure of merit of 0.2 Ω−1. Moreover, demonstrated for the first time partial optical transparency of the CaSi2 in the visible range could significantly heighten its applicability for Si-based optoelectronics.
2021. Nanocrystalline CaSi films with a thickness of 80 to 130 nm were grown on high-resistance silicon substrates with the (111) and (100) orientations by low-temperature (190-330 °C) molecular-beam epitaxy and low-temperature (330 °C) solid-phase epitaxy, for which studied the micro-structure, phase composition and crystal structure. It was found that polycrystalline, nanocrystalline (NC) and amorphous films of CaSi and CaSi2 were first detected by the dominant contribution of holes in the range 1.4-300 K. In magnetic fields of 1-4 T and at temperatures of 40-100 K, a giant linear magnetoresistive effect (up to 500 %). In CaSi2 films with the contribution of the second phase (CaSi), a peak at temperatures of 100-200 K was found on the temperature dependences of the resistivity and Hall coefficient, which corresponds to a phase transition. Additionally, in this film, a transition from positive to negative MRE was found at T=120-200 K. This effect was not detected in a single-phase CaSi2 film that corresponds to a certain rearrangement in the magnetic field of carrier fluxes only in a two-phase system. The study of thermoelectric properties of CaSi and CaSi2 films showed that the semimetallic type of conductivity in them leads to the independence of the positive Seebeck coefficient at T=330-450 K. It was found that the maximum contribution to the Seebeck coefficient and power factor is observed in an amorphous CaSi film in the presence of a certain fraction of the NC Ca2Si phase. In single-phase CaSi2 films, a twofold decrease in the Seebeck coefficient and power factor is observed due to an increase in the hole concentration in comparison with CaSi films.
2018. Goroshko D. et al. Photoconductivity and conductivity processes in Si-Sn films grown on Si (100) substrate at room temperature //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 95-101.
2018. Goroshko D. et al. Thermoelectric properties of nanostructured material based on Si and GaSb //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 102-109.
2017. -
2015. Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
2017. Goroshko D. L. et al. Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure //AIP Conference Proceedings. – AIP Publishing LLC, 2017. – Т. 1874. – №. 1. – С. 030015.
2018. Chusovitin E. et al. Formation of a thin continuous GaSb film on Si (001) by solid phase epitaxy //nanomaterials. – 2018. – Т. 8. – №. 12. – С. 987.