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005.007.01
005.007.02
See Russian version.
Theses prepared for submission
Postgraduate
Fields of study
Междисциплинарная кафедра подготовки кадров высшей квалификации
Admission to the postgraduate
Прием в целевую аспирантуру
Список аспирантов (на 1 октября 2024 года)
anti-corruption
Korobtsov Vladimir Victorovich
Degree:
Dr.Sc. (Phys.-Math.)
Position:
chief scientific employee
Room:
313
Phone:
2-310-696
Internal Phone:
1-97
Email:
korobtsov@iacp.dvo.ru
Publications:
2018
2017
2016
2015
2014
2013
2012
2011
Article
Tezis
2011.
2017.
2013.
2015. Balashev V.V., Pisarenko T.A., Vikulov V.A., Korobtsov V.V. RHEED study of the texture in polycrystalline films of magnetite grown on oxidized silicon surface // Third Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2015): Proceedings. – Vladivostok, Dalnauka, August 19 – 26, 2015. P.183-184.
2014. Pisarenko T.A., Korobtsov V.V., Vikulov V.A., Dimitriev A.A., Balashev V.V. The influence of seed layer on growth of magnetite films on the SiO2/Si(001) surface // Solid State
2011.
2011.
2014. Vikulov V.A., Dimitriev A.A., Balashev V.V., Pisarenko T.A., Maslov AM., Korobtsov V.V. Electrical transport features in the Fe3O4/SiO2/Si hybrid structures // Solid State Phenomena, 2014, Vol. 213, P.56-59.
2012. Vikulov V.A., Balashev V.V., Pisarenko T.A., Dimitriev A.A., Korobtsov V.V. Thin Magnetite Films on an Oxidized Silicon Surface: Raman Spectroscopy Study //Technical Physics Letters, 2012, Vol. 38, No. 4, P. 772–775.
2015. Balashev V.V., Vikulov V.A., Pisarenko T.A., Korobtsov V.V. Effect of oxygen pressure on the texture of a magnetite film grown by reactive deposition on a SiO2/Si(001) surface // Physics of the Solid State, 2015, V.57, No. 12, P.2532-2536.
2012.
2014.
2017. Balashev V.V., Vikulov V.A., Dimitriev A.A., Pisarenko T.A., Pustovalov E.V., Korobtsov V.V. Evolution of the structural and magnetotransport properties of magnetite films depending on the temperature of their synthesis on the SiO2/Si(001) surface // The Physics of Metals and Metallography, 2017, Vol.118, No. 7, P.644–651.
2013. Korobtsov V.V., Pisarenko T.A., Vikulov V.A., Dimitriev A.A., Balashev V.V. The influence of seed layer on growth of magnetite films on the SiO2/Si(001) surface // The Second Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2013), Vladivostok, 20-27 August, 2013, C.161-162.
2012. Dimitriev A. A., Vikulov V. A., Pisarenko T. A., Balashev V. V., Korobtsov V. V. Thickness dependence of the electrical and magnetutransport properties of magnetite films formed on oxidized silicon surface // The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-10), Tokyo, Japan, 2012. G-3.
2018. Balashev V.V., Korobtsov V.V. Structure of Ultrathin Polycrystalline Iron Films Grown on SiO2/Si(001) // Technical Physics, 2018, Vol. 63, No.1, P. 73-77.
2016.
2012. Vikulov V.A., Balashev V.V., Pisarenko T.A., Dmitrev A.A., Korobtsov V.V. The Effect of Synthesis Temperature on Structural and Magnetic Properties of Fe3O4 Films Grown on the SiO2/Si(001) Surface //Technical Physics Letters, 2012, Vol. 38, No. 4, P. 336–339.
2017.
2011. Balashev V.V., Korobtsov V.V., Pisarenko T.A., Chebotkevich L.A. Growth of Fe3O4 Films on the Si(111) Surface Covered by a Thin SiO2 Layer // Technical Physics, 2011, Vol. 56, No. 10, P. 1501–1507.
2016.
2016.
2015. Vikulov V.A., Dimitriev A.A., Balashev V.V., Pisarenko T.A., Korobtsov V.V. Correlation of magnetotransport and transport properties of a hybrid Fe3O4/SiO2/Si structures with the different conductivity type of Si substrate // Third Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2015): Proceedings. – Vladivostok, Dalnauka, August 19 – 26, 2015. P.203-204.
2015. Dimitriev A.A., Pisarenko T.A., Balashev V.V., Korobtsov V.V., Vikulov V.A. The influence of substrate doping levels on the magnetic properties of Fe3O4/SiO2/n-Si hybrid structure // Third Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2015): Proceedings. – Vladivostok, Dalnauka, August 19 – 26, 2015. P.319-320.
2014. Volkov N.V., Tarasov A.S., Smolyakov D.A., Gustaitsev A.O., Balashev V.V., Korobtsov V.V. The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier // Appl. Phys. Lett. V.104, (2014) 222406-(1-5)
2012.
2013. Vikulov V.A., Dimitriev A.A., Balashev V.V., Pisarenko T.A., Maslov AM., Korobtsov V.V. Electrical transport features in the Fe3O4/SiO2/Si hybrid structures // The Second Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2013), Vladivostok, 20-27 August, 2013. С.165-166.
2016. Tarasov A.S., Rautskii M.V., Lukyanenko A.V., Volochaev M.N., Eremin E.V., Korobtsov V.V., Balashev V.V., Vikulov V.A., Solovyov L.A., Volkov N.V. Magnetotransport and transport properties of a hybrid Fe3O4/SiO2/Si structures with different conductivity type of Si substrate // Journal of Alloys and Compounds, 2016. Vol. 688. P.1095-1100.
2014.
2016. Vikulov V.A., Dimitriev A.A., Balashev V.V., Pisarenko T.A., Korobtsov V.V. Low-temperature conducting channel switching in hybrid Fe3O4/SiO2/n-Si structures // Materials Science and Engineering: B, 2016. Vol. 211. P.33-36.
2018. T.A. Pisarenko, V.V. Balashev, V.A. Vikulov, A.A. Dimitriev, V.V. Korobtsov. A comparative study of the lateral photovoltaic effect in Fe3O4/SiO2/n-Si and Fe3O4/SiO2/p-Si structures // Physics of the Solid State. 2018. Vol. 60. No. 7. P. 1013-1017.
2012.
2012. Vikulov V. A., Balashev V. V., Pisarenko T. A., Dimitriev A. A., Korobtsov V. V. Temperature dependant switching effect of the conductivity channel in the silicon MOS structures with thin Fe3O4 films // The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-10), Tokyo, Japan, 2012. G-4.
2013.
2016.
2016. Balashev V.V., Vikulov V.A., Pisarenko T.A., Korobtsov V.V. RHEED study of the texture in polycrystalline films of magnetite grown on oxidized silicon surface // Solid State Phenomena, 2016,Vol. 247, P.118-123.
2016.
2016.