The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier
2014
Applied Physics Letters, Q1
Статьи в журналах
Applied Physics Letters
USA, New York, AIP Publishing LLC
Vol.104, (2014) pp.222406
3.794
0
0003-6951, e- 1077-3118
Volkov N.V., Tarasov A.S., Smolyakov D.A., Gustaitsev A.O., Balashev V.V., Korobtsov V.V. The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier // Appl. Phys. Lett. V.104, (2014) 222406-(1-5)