2017
Галкин Н. Г., Горошко Д. Л., Доценко С. А., Чусовитин Е. А., Чусовитина С. В., Шевлягин А. В., А.К. Гутаковский
Scripta Materialia, Q1
1359-6462
Chusovitin E. A. et al. GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon //Scripta Materialia. – 2017. – Т. 136. – С. 83-86.
Scripta Materialia Volume, 136 (2017) 83-86
A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb ||Si.
4.163
Статьи в журналах
Scripta Materialia
Netherlands, Amsterdam, Elsevier
https://doi.org/10.1016/j.scriptamat.2017.04.004