ИАПУ ДВО РАН

GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon


2017

Галкин Н. Г., Горошко Д. Л., Доценко С. А., Чусовитин Е. А., Чусовитина С. В., Шевлягин А. В., А.К. Гутаковский

Scripta Materialia, Q1

Статьи в журналах

Scripta Materialia

Netherlands, Amsterdam, Elsevier

Scripta Materialia Volume, 136 (2017) 83-86

83-86

4.163

1359-6462

Chusovitin E. A. et al. GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon //Scripta Materialia. – 2017. – Т. 136. – С. 83-86.

A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb ||Si.

https://doi.org/10.1016/j.scriptamat.2017.04.004

https://www.sciencedirect.com/science/article/abs/pii/S1359646217301793