2015
Галкин К. Н., Галкин Н. Г., Горошко Д. Л., Чусовитин Е. А., Шевлягин А. В., А.К. Гутаковский
Scientific Reports, Q2
By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p+-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3–4 and 15–20 nm and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2% and a specific detectivity of 1.2 × 109 cm × Hz1/2/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.
Статьи в журналах
Scientific Reports
5.228
Shevlyagin A. V. et al. Enhancement of the Si pn diode NIR photoresponse by embedding β-FeSi 2 nanocrystallites //Scientific reports. – 2015. – Т. 5. – №. 1. – С. 1-9.
Scientific Reports, 5, 14795 (2015)
2045-2322
UK, London, Nature Research
https://doi.org/10.1038/srep14795