Галкин Н. Г., Горошко Д. Л., Саранин А. А., Чусовитин Е. А., Шевлягин А. В., Т.С. Шамирзаев, К.С. Журавлёв, А.В. Латышев
Applied Physics Letters, Q1
Applied Physics Letters
USA, Maryland, AIP Publishing
Appl. Phys. Lett. 101, 163501 (2012)
163501-1 - 163501-4
Galkin N. G. et al. Room temperature 1.5 μ m light-emitting silicon diode with embedded β-FeSi2 nanocrystallites //Applied Physics Letters. – 2012. – Т. 101. – №. 16. – С. 163501.
Light-emitting silicon diode structures with embedded β-FeSi2 nanocrystallites have been fabricated using solid phase epitaxy and a combination of reactive deposition and solid phase epitaxy. Electroluminescence (EL) of the structures was studied over various temperatures and current densities under forward and reverse biases. The structures with nanocrystallites formed by the combined method exhibited EL at temperatures below 70 K only, suggesting the presence of a high concentration of defects—non-radiative centers. High-quality defect-free structures with nanocrystallites formed by solid phase epitaxy revealed intensive room temperature EL in energy range 0.76–1.08 eV at current densities as low as 1 A/cm2.