2012
Галкин Н. Г., Горошко Д. Л., Саранин А. А., Чусовитин Е. А., Шевлягин А. В., Т.С. Шамирзаев, К.С. Журавлёв, А.В. Латышев
Applied Physics Letters, Q1
USA, Maryland, AIP Publishing
3.597
Applied Physics Letters
Appl. Phys. Lett. 101, 163501 (2012)
Light-emitting silicon diode structures with embedded β-FeSi2 nanocrystallites have been fabricated using solid phase epitaxy and a combination of reactive deposition and solid phase epitaxy. Electroluminescence (EL) of the structures was studied over various temperatures and current densities under forward and reverse biases. The structures with nanocrystallites formed by the combined method exhibited EL at temperatures below 70 K only, suggesting the presence of a high concentration of defects—non-radiative centers. High-quality defect-free structures with nanocrystallites formed by solid phase epitaxy revealed intensive room temperature EL in energy range 0.76–1.08 eV at current densities as low as 1 A/cm2.
1077-3118
Galkin N. G. et al. Room temperature 1.5 μ m light-emitting silicon diode with embedded β-FeSi2 nanocrystallites //Applied Physics Letters. – 2012. – Т. 101. – №. 16. – С. 163501.
https://doi.org/10.1063/1.4758485