2019
Галкин Н. Г., Горошко Д. Л., Доценко С. А., Чусовитин Е. А., Шевлягин А. В., А.К. Гутаковский
Тезисы
SPIE conference proceedings
USA, Bellingham, SPIE
Proc. SPIE 11024 (2017) 1102402
8
1996-756X
Chusovitin E. et al. Embedding of iron silicide nanocrystals into monocrystalline silicon: suppression of emersion effect //Asia-Pacific Conference on Fundamental Problems of Opto-and Microelectronics 2017. – International Society for Optics and Photonics, 2019. – Т. 11024. – С. 1102402.
The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and ε-FeSi phases. Annealing of NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ε-FeSi into α-FeSi2. On the other hand, silicon layer growth over as-formed NCs, at the same temperature, resulted in formation of single phase NCs consisted of β-FeSi2. Silicon deposition rate proved to be the crucial point for a full embedding of NCs. The rate of 1 nm/min resulted in emersion of NCs to the surface during silicon overgrowth irrespective of Si cap layer thickness, while the rate of 8 nm/min led to the full embedding of β-FeSi2 NCs. Both incompletely and fully embedded β-FeSi2 NCs have epitaxial relationship and stress favorable for an indirect to direct band-gap transition at Y point
https://doi.org/10.1117/12.2314675