Enhancement of near IR sensitivity of silicon‐silicide based photodetectors


Галкин Н. Г., Горошко Д. Л., Чусовитин Е. А., Шевлягин А. В., Mikhail Bozhenko, Raphael Batalov, Rustem Bayazitov

Статьи в журналах

physica status solidi (c)

USA, Hoboken, John Wiley & Sons

physica status solidi (c). 10 (2013) 1844-1846.



Goroshko D. et al. Enhancement of near IR sensitivity of silicon‐silicide based photodetectors //physica status solidi (c). – 2013. – Т. 10. – №. 12. – С. 1844-1846.

Investigation of photo‐emf spectra of heterostructures with embedded chromium and iron disilicide nanoparticles in the monocrystalline silicon substrates was carried out. Formation of the samples was performed using two different methods: ion‐beam synthesis (IBS) and molecular‐beam epitaxy (MBE). The samples contain a precipitates of CrSi2 and β‐FeSi2 obtained after annealing by pulsed ion‐beam treatment of ion‐beam synthesis. In the molecular‐beam deposited samples there were two bilayers of chromium and iron disilicide or eight layers of β‐FeSi2 in the form of nanocrystallites. It was shown, that MBE heterostructure with Cr and Fe shows 3 times higher photoresponse at the energy 0.85 eV compared to reference diode at room temperature. The highest impact at 130 K in the photoresponse signal (about three orders) was achieved in the eight‐period β‐FeSi2MBE sample.