Галкин К. Н., Галкин Н. Г., Горошко Д. Л., Доценко С. А., Субботин Е. Ю., Чусовитин Е. А., Чусовитина С. В., Anton Gutakovskii
Статьи в журналах
Chusovitin E. et al. Formation of a thin continuous GaSb film on Si (001) by solid phase epitaxy //nanomaterials. – 2018. – Т. 8. – №. 12. – С. 987.
Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga–Sb mixture using solid-phase epitaxy at temperatures of 200–500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption. At the annealing temperature of 300 °C, a 14-nm-thick GaSb film aggregates, while a 20-nm-thick GaSb film remains continuous with a roughness of 1.74 nm. A GaSb film with a thickness of 20 nm consists of crystalline grains with a size of 9–16 nm. They were compressed by ~2%. For some GaSb grains, new epitaxial relationships have been found: GaSb ||Si and GaSb ||Si , GaSb ||Si and GaSb ||Si , and GaSb ||Si and GaSb ||Si .