2025
Бородаенко Ю. М., Гурбатов С. О., Кучмижак А. А., Черепахин А. Б., Шевлягин А. В., Модин Евгений
Surfaces and Interfaces, Q1
Yulia Borodaenko, Artem Cherepakhin, Stanislav O. Gurbatov, Evgeny Modin, Aleksandr V. Shevlyagin, Aleksandr A. Kuchmizhak / Polarized p–n junction Si photodetector enabled by direct laser-induced periodic surface structuring // Surfaces and Interfaces. – 2025. – Vol. 56 - p. 105568.
Статьи в журналах
Monocrystalline silicon (Si or c-Si) is of paramount importance for modern optoelectronics, yet its centrosymmetric crystal lattice restricts any inherent optical anisotropy. This fundamental limitation precludes construction of polarization-sensitive Si-based photodetectors (PD) relevant for bioimaging, information encryption and ellipsometry. In this work, we used laser-induced periodic surface structuring (LIPSS) to directly imprint optically anisotropic nanogratings with a periodicity around 270 nm over the active area of a vertical p–n junction Si PD. Sensitivity to polarization of the incident radiation was observed within 700–1100 nm spectral range with a photoresponse modulation up to 80% for the cross-polarized light under zero bias conditions. Defect-mediated absorption within laser-patterned layer was found to expand operation range of the PD rendering it with ability to detect photons with sub-band gap energies (up to 1400 nm), while causing no crucial degradation of dynamic characteristics and photoresponse of the self-powered device within common operation window. Under a small reverse bias of 1 V, the LIPSS-patterned PD provides cross-polarized photoresponse modulation up to 430% surpassing 100% external quantum efficiency benchmark under optimal excitation. Importantly, such competitive device performance was achieved through facile upscalable procedure without hyperdoping requiring expensive gas chambers and toxic chemicals.
Volume 56, 1 January 2025, 105568
https://doi.org/10.1016/j.surfin.2024.105568