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Temperature dependant switching effect of the conductivity channel in the silicon MOS structures with thin Fe3O4 films

2012

Материалы / тезисы конференций

The 10th Japan-Russia Seminar on Semiconductor Surfaces Together with Asian Countries. Abstracts. T

Japan, Hongo, Tokyo, University of Tokyo

G-4

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Vikulov V. A., Balashev V. V., Pisarenko T. A., Dimitriev A. A., Korobtsov V. V. Temperature dependant switching effect of the conductivity channel in the silicon MOS structures with thin Fe3O4 films // The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-10), Tokyo, Japan, 2012. G-4.