2012
Балашев В. В., Викулов В. А., Димитриев А. А., Коробцов В. В., Писаренко Т. А.
The 10th Japan-Russia Seminar on Semiconductor Surfaces Together with Asian Countries. Abstracts. T
Vikulov V. A., Balashev V. V., Pisarenko T. A., Dimitriev A. A., Korobtsov V. V. Temperature dependant switching effect of the conductivity channel in the silicon MOS structures with thin Fe3O4 films // The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-10), Tokyo, Japan, 2012. G-4.
Материалы / тезисы конференций
G-4
-
0
Japan, Hongo, Tokyo, University of Tokyo
0