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Atomic structure and electronic properties of the Si(111)√3×√3-(Tl, A) (A = Group IV, V, VI) compounds

2016

Бондаренко Л. В., Грузнев Д. В., Зотов А. В., Матецкий А. В., Саранин А. А., Тупчая А. Ю., I.A. Kibirev, C.M. Wei, C.R. Hsing, A.N. Mihalyuk

Abstracts of 2-nd Asia-Pacific Symposium on Solid Surfaces (APSSS-2), November 13-16, 2016, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan

A.A. Saranin, A.V. Matetskiy, I.A. Kibirev, D.V. Gruznev, L.V. Bondarenko, A.Y. Tupchaya, C.M. Wei, C.R. Hsing, A.N. Mihalyuk, A.V. Zotov. Atomic structure and electronic properties of the Si(111)√3×√3-(Tl, A) (A = Group IV, V, VI) compounds // Abstracts of 2-nd Asia-Pacific Symposium on Solid Surfaces (APSSS-2), November 13-16, 2016, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan. Taipei: IAMS, Academia Sinica, 2016, P. 7.

Taiwan, Taipei: IAMS, Academia Sinica

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