Atomic structure and electronic properties of the Si(111)√3×√3-(Tl, A) (A = Group IV, V, VI) compounds


2016

Бондаренко Л. В., Грузнев Д. В., Зотов А. В., Матецкий А. В., Саранин А. А., Тупчая А. Ю., I.A. Kibirev, C.M. Wei, C.R. Hsing, A.N. Mihalyuk

Материалы / тезисы конференций

A.A. Saranin, A.V. Matetskiy, I.A. Kibirev, D.V. Gruznev, L.V. Bondarenko, A.Y. Tupchaya, C.M. Wei, C.R. Hsing, A.N. Mihalyuk, A.V. Zotov. Atomic structure and electronic properties of the Si(111)√3×√3-(Tl, A) (A = Group IV, V, VI) compounds // Abstracts of 2-nd Asia-Pacific Symposium on Solid Surfaces (APSSS-2), November 13-16, 2016, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan. Taipei: IAMS, Academia Sinica, 2016, P. 7.

Taiwan, Taipei: IAMS, Academia Sinica

Abstracts of 2-nd Asia-Pacific Symposium on Solid Surfaces (APSSS-2), November 13-16, 2016, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan