2020
Галкин Н. Г., Чернев И. М., Шевлягин А. В., Андрей Герасименко, Антон Гутаковский, Terai Yoshikazu, Hoshida Hirofumi, Naofumi Nishikawa, Keisuke Ohdaira
Solar Energy, Q2
A. Shevlyagin, I. Chernev. N. Galkin, A. Gerasimenko, A. Gutakovskii, H. Hoshida, Y. Terai, N. Nishikawa, K. Ohdaira. Probing the Mg2Si/Si (1 1 1) heterojunction for photovoltaic applications // Solar Energy. – 2020. – Т. 211. – С. 383-395.
Netherlands, Amsterdam, Elsevier
Статьи в журналах
n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demonstrated clear rectification and zero bias photoresponse in the (400–1400) nm wavelength range at room temperature. Under AM 1.5 illumination, an open-circuit voltage of 0.21 V, a short-circuit current density of 3.3 mA/cm2, fill factor of 0.36 were obtained while the conversion efficiency reached 0.24%, which is the pioneering demonstration of Mg2Si-based solar cell operation. Combined minority-carrier lifetime, Raman and AFM mapping together with TEM and XRD data revealed that carrier dynamics and photovoltaic performance are limited by the presence of non-epitaxial Mg2Si grains in the upper silicide film layer. However, minority-carrier lifetime up to 7.3 µs for Mg2Si demonstrates its great potential as absorbing material for Si-based solar cells.
Shevlyagin et al. Solar Energy, 211 (2020) 383-395
Solar Energy
0038-092X
4.608
https://doi.org/10.1016/j.solener.2020.09.085