2017
Tezis
AIP Conference Proceedings
AIP Publishing
AIP Conference Proceedings 1874, 030015 (2017)
978-0-7354-1554-6
Goroshko D. L. et al. Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure //AIP Conference Proceedings. – AIP Publishing LLC, 2017. – Т. 1874. – №. 1. – С. 030015.
Two-layer heterostructure with GaSb nanocrystals formed by solid phase epitaxy and embedded into the silicon was investigated using low-temperature (10-140 K) photoluminescence and time-resolved photoluminescence spectroscopies. Two characteristic luminescence bands with a maximum of about 0.82 and 0.87 eV were observed. It was found that low-energy peak is associated with D1 dislocation-related luminescence in silicon. Analysis of the decay components together with temperature and power dependencies of the photoluminescence for the high-energy maximum revealed that emission is more likely originated from the combined D2 dislocation centers in silicon and radiative recombination in type–II band alignment Si/GaSb nanocrystals/Si heterostructure. A nonradiative recombination dominates in all temperature range studied.
https://doi.org/10.1063/1.4998044