2017
Галкин К. Н., Галкин Н. Г., Горошко Д. Л., Чернев И. М., Чусовитин Е. А., Шевлягин А. В.
Тезисы
JJAP Conference Proceedings
UK, Bristol, IOP Publishing
JJAP Conf. Proc. 5, 011108 (2017)
8
978-4-86348-617-1
Goroshko D. L. et al. Solid phase epitaxy formation of silicon-GaSb based heterostructures //JJAP Conference Proceedings. – The Japan Society of Applied Physics, 2016. – Т. 5.
A double-layer heterostructure with embedded into single-crystalline silicon matrix nanocrystallites of gallium antimonide was grown. GaSb was formed by solid phase epitaxy method using Ga-Sb stoichiometric mixture of 2-nm-thick and a stepped annealing from 200 to 500 °C. The obtained nanocrystallites have a concentration of 7.1 × 1010 cm−2, a height of 4.6 nm and lateral dimensions of 16–20 nm. The GaSb nanocrystallites were covered with silicon layer using molecular beam epitaxy in two stage: 40-nm-thick at 300 °C followed by 60-nm-thick at 500 °C.