ИАПУ ДВО РАН

Solid phase epitaxy formation of silicon-GaSb based heterostructures


2017

Материалы / тезисы конференций

JJAP Conference Proceedings

UK, Bristol, IOP Publishing

JJAP Conf. Proc. 5, 011108 (2017)

978-4-86348-617-1

Goroshko D. L. et al. Solid phase epitaxy formation of silicon-GaSb based heterostructures //JJAP Conference Proceedings. – The Japan Society of Applied Physics, 2016. – Т. 5.

A double-layer heterostructure with embedded into single-crystalline silicon matrix nanocrystallites of gallium antimonide was grown. GaSb was formed by solid phase epitaxy method using Ga-Sb stoichiometric mixture of 2-nm-thick and a stepped annealing from 200 to 500 °C. The obtained nanocrystallites have a concentration of 7.1 × 1010 cm−2, a height of 4.6 nm and lateral dimensions of 16–20 nm. The GaSb nanocrystallites were covered with silicon layer using molecular beam epitaxy in two stage: 40-nm-thick at 300 °C followed by 60-nm-thick at 500 °C.

doi:10.7567/JJAPCP.5.011108

https://journals.jsap.jp/jjapproceedings/online/5-011108