2015
Материалы / тезисы конференций
Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
Optical and electrical properties of Mg stannide and germanide nanolayers grown by solid phase epitaxy on a Si(111)7×7 substrate have been studied. It was shown that all grown ultrathin (45-90 nm) films are semiconductors with small band gaps: 0.17-0.22 eV for Mg2Sn and Mg2SnxSi1-x, 0.70 eV for Mg2Ge and 0.56 eV for Mg2GexSi1-x. Optical functions, interband transitions and mechanism of electrical transport of carriers in all films have been determined.