2015
Галкин К. Н., Галкин Н. Г., Горошко Д. Л., Доценко С. А., Маслов А. М., Субботин Е. Ю., Чернев И. М., Шевлягин А. В., L. DOSZA, Z. OSVATH, B. PECHZ, R. KUDRAWIEC, J. MISIEWICZ
Тезисы
4
Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
Optical and electrical properties of Mg stannide and germanide nanolayers grown by solid phase epitaxy on a Si(111)7×7 substrate have been studied. It was shown that all grown ultrathin (45-90 nm) films are semiconductors with small band gaps: 0.17-0.22 eV for Mg2Sn and Mg2SnxSi1-x, 0.70 eV for Mg2Ge and 0.56 eV for Mg2GexSi1-x. Optical functions, interband transitions and mechanism of electrical transport of carriers in all films have been determined.