ИАПУ ДВО РАН

SEMICONDUCTING Mg 2 Sn AND Mg 2 Ge NANOLAYERS ON Si(111) SUBSTRATES: FORMATION, STRUCTURE AND PROPERTIES


2015

Tezis

Physics, Chemistry and Applications of Nanostructures

World Scientific

Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.

Optical and electrical properties of Mg stannide and germanide nanolayers grown by solid phase epitaxy on a Si(111)7×7 substrate have been studied. It was shown that all grown ultrathin (45-90 nm) films are semiconductors with small band gaps: 0.17-0.22 eV for Mg2Sn and Mg2SnxSi1-x, 0.70 eV for Mg2Ge and 0.56 eV for Mg2GexSi1-x. Optical functions, interband transitions and mechanism of electrical transport of carriers in all films have been determined.

10.1142/9789814696524_0033

https://www.worldscientific.com/doi/abs/10.1142/9789814696524_0033