ИАПУ ДВО РАН

Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Laser Processing


2020

Solid State Phenomena, Scopus

Статьи в журналах

E. Mitsai, A.V. Dostovalov, K.A. Bronnikov, A.V. Nepomniaschiy, A.Y. Zhizhchenko, A.A. Kuchmizhak. Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Laser Processing // Solid State Phenomena 2020, 312, 134-139.

We demonstrated efficient crystallization of amorphous Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of the laser-annealed film by atomic-force microscopy, Fourier-transform IR, Raman and energy dispersive X-ray spectroscopy as well as numerical modeling of optical spectra confirmed efficient crystallization of amorphous Si and high-quality of the obtained films opening pathway for applications in thin-film solar cells, transistors and displays.

https://doi.org/10.4028/www.scientific.net/SSP.312.134

https://www.scientific.net/SSP.312.134