Гуральник Александр Самуилович

• 2010. Influence of the Si(100)-c(4x12)-Al surface phase on formation and electrical properties of thin iron films
• 2021. Gouralnik A. S., Shevlyagin A. V., Chernev I. M., Ustinov A. Y., Gerasimenko A. V., Gutakovskii, A. K. Synthesis of crystalline Mg2Si films by ultrafast deposition of Mg on Si (111) and Si (001) at high temperatures. Mg/Si intermixing and reaction mechanisms // Materials Chemistry and Physics. 2021. Vol. 258. Article number 123903.
• 2022. A.S. Gouralnik, Yu.V. Luniakov. Mg/Si interface reaction: How and why. Towards rational technologies of Mg2Si film growth for energy conversion. Vacuum, 2022, Vol.196, P.110798-4.
• 2018. Gouralnik A. S. et al. Formation of Mg2Si at high temperatures by fast deposition of Mg on Si (111) with wedge-shaped temperature distribution //Applied Surface Science. – 2018. – Т. 439. – С. 282-284.
• 2020. Terai Y. et al. Photoreflectance Spectra of Highly-oriented Mg 2 Si (111)//Si (111) Films //JJAP Conference Proceedings. – The Japan Society of Applied Physics, 2020. – Т. 8. - 011004
• 2019. S.A. Dotsenko, Yu.V. Luniakov, A.S. Gouralnik, A.K. Gutakovskiy, N.G. Galkin. Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability. Journal of Alloys and Compounds, 2019, Vol.778, P.514-521.
• 2013. Gouralnik A. S. et al. Brief observe on iron silicide growth on amorphous silicon //Physica status solidi (c). – 2013. – Т. 10. – №. 12. – С. 1742-1745.