ИАПУ ДВО РАН

Вековшинин Юрий Евгеньевич

Должность: младший научный сотрудник

Подразделение: Лаборатория технологии двумерной микроэлектроники (№101)

Email: vekovshinin98@mail.ru

Публикации:

Статьи в журналах

2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Single- and double-atomic In layers grown on top of a single-atomic-layer NiSi2 on Si(111). Physical Review B, 2022, V.106, P.035412-8.
2022. A.N. Mihalyuk, D.V. Gruznev, L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, S.V. Eremeev, A.V. Zotov, A.A. Saranin. 2D heavy fermion CePb3 kagome material on silicon: Emergence of unique spin polarized states for spintronics. Nanoscale, 2022, Vol.14, P.14732-14377.
2024. L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Atomic-scale observations of the immiscible melted metals confined in a single-atom layer. Physica Status Solidi - Rapid Research Letters, 2024, Vol,18, Iss.2, P. 2300254-5.
2022. V.V. Mararov, T.V. Utas, L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, A.V. Zotov, A.A. Saranin. Self-assembly of C60 layers at Tl/NiSi2 atomic sandwich on Si(111). Surface Science, 2022, Vol.715, p.121934-5.
2024. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, D.A. Olyanich, T.V. Utas, A.N. Mihalyuk, A.V. Zotov, A.A. Saranin. Effect of embedded Cr on the structural phase transition of In/Si(111)4×1. Surface Science, 2024, Vol.739, P.122400-6.
2021. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D. V. Gruznev, A.N. Mihalyuk, Y.P. Ivanov, D.A. Olyanich, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Metal sheet of atomic thickness embedded in silicon. ACS Nano, 2021, Vol.15, No.12, 19357–19363.
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, T.V. Utas, A.N. Mihalyuk, N.V. Denisov, A.V. Zotov, A.A. Saranin. Dense single-atomic 14×√3-reconstructed Pb layer on Si(111) with advanced structural and superconducting properties. Physical Review B, 2023, V.108, P.115428-9.
2022. A.Y. Tupchaya, L.V. Bondarenko, A.A. Yakovlev, Y.E. Vekovshinin, A.N. Mihalyuk, D.V. Gruznev, N.S. Denisov, A.V. Matetskiy, A.Yu. Aladyshkin, A.V. Zotov, A.A. Saranin. 2D system incorporating perforated Mg sheet sandwiched between Pb layer and Si(111). Applied Surface Science, 2022, Vol.589, P.152951-6
2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, V.G. Kotlyar, T.V. Utas, A.N. Mihalyuk, A.V. Matetskiy, N.V. Denisov, A.V. Zotov, A.A. Saranin. Gold interlayer promotes superconductivity in single- and double-atomic Pb layers on Si(100). Journal of Physical Chemistry Letters, 2022, Vol.13, P.10479-10485.
2020. L.V. Bondarenko, A.N. Mihalyuk, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.V. Zotov, A.A. Saranin. Au induced reconstructions of Si(111) surface with ordered and disordered domain walls. Physical Review B, 2020, Vol. 101, P. 075405-9
2023. A.N. Mihalyuk, L.V. Bondarenko, A.Y. Tupchaya, Yu.E. Vekovshinin, T.V. Utas, D.V. Gruznev, Jyh-Pin Chou, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Large-scale thallene film with emergent spin-polarized states mediated by tin intercalation for spintronics applications. Materials Today Advances, 2023, Vol.18, P.100372-7.
2021. A.N. Mihalyuk, L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, Y.E. Vekovshinin, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. One-dimensional spin-polarized electron channel in the two-dimensional PbBi compound on silicon. Physical Review B, 2021, Vol. 104, P.125413-7.
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, V.G. Kotlyar, T.V. Utas, A.N. Mihalyuk, N.V. Denisov, A.V. Zotov, A.A. Saranin. Alloying with Ga promotes superconductivity in single-atomic Pb layer on Si(111). Journal of Alloys and Compounds, 2023, Vol. 969, P. 172453-5.
2020. A.Y. Tupchaya, L.V. Bondarenko, Y.E. Vekovshinin, A.A. Yakovlev, A.N. Mihalyuk, D.V. Gruznev, C.R. Hsing, C.M. Wei, A.V. Zotov, A.A. Saranin. Double- atomic-layer Tl-Mg compound on a Si(111) surface with advanced electronic properties. Physical Review B, 2020, Vol. 101, P. 235444-7
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, D.A. Olyanich, T.V. Utas, V.S. Zhdanov, A.V. Zotov, A.A. Saranin. Few monolayer Ga film on Si(111): Illusive gallenene formation and localization instead of superconductivity. Mol. Syst. Des. Eng., 2023, Vol.8, P.604-610.
2022. A.N. Mihalyuk, Y.E. Vekovshinin, L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Insights into the electronic properties of PbBi atomic layers on Ge(111) and Si(111) surfaces. Frontiers in Materials, 2022, Vol. 9, P.882008-10.
2020. L.V. Bondarenko, A.Y. Tupchaya, A.N. Mihalyuk, S.V. Eremeev, A.V. Matetskiy, N.V. Denisov, Y.E. Vekovshinin, A.V. Slyshkin, D.V. Gruznev, A.V. Zotov, A.A. Saranin. Fabrication and characterization of a single monolayer NiSi2 sandwiched between a Tl capping layer and a Si(111) substrate. 2D Materials, 2020, Vol. 7, No.2, P.025009-9.
2024. A.N. Mihalyuk, Yu.E. Vekovshinin, A.Y. Tupchaya, L.V. Bondarenko, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Promoting spin-polarized states in Bi/Si(111) interface mediated by Ba intercalation for advanced spintronics applications. Scripta Materialia, 2024, Vol. 239, P. 115807-6.
2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D. V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Pb/NiSi2 atomic sandwich on Si(111). Surface Science, 2022, Vol.716, P.121966-6.