ИАПУ ДВО РАН

Вековшинин Юрий Евгеньевич

Должность: младший научный сотрудник

Подразделение: Лаборатория технологии двумерной микроэлектроники (№101)

Email: vekovshinin98@mail.ru

Публикации:

Статьи в журналах

2022. V.V. Mararov, T.V. Utas, L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, A.V. Zotov, A.A. Saranin. Self-assembly of C60 layers at Tl/NiSi2 atomic sandwich on Si(111). Surface Science, 2022, Vol.715, p.121934-5.
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, D.A. Olyanich, T.V. Utas, V.S. Zhdanov, A.V. Zotov, A.A. Saranin. Few monolayer Ga film on Si(111): Illusive gallenene formation and localization instead of superconductivity. Mol. Syst. Des. Eng., 2023, Vol.8, P.604-610.
2020. L.V. Bondarenko, A.N. Mihalyuk, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.V. Zotov, A.A. Saranin. Au induced reconstructions of Si(111) surface with ordered and disordered domain walls. Physical Review B, 2020, Vol. 101, P. 075405-9
2022. A.N. Mihalyuk, Y.E. Vekovshinin, L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Insights into the electronic properties of PbBi atomic layers on Ge(111) and Si(111) surfaces. Frontiers in Materials, 2022, Vol. 9, P.882008-10.
2020. A.Y. Tupchaya, L.V. Bondarenko, Y.E. Vekovshinin, A.A. Yakovlev, A.N. Mihalyuk, D.V. Gruznev, C.R. Hsing, C.M. Wei, A.V. Zotov, A.A. Saranin. Double- atomic-layer Tl-Mg compound on a Si(111) surface with advanced electronic properties. Physical Review B, 2020, Vol. 101, P. 235444-7
2024. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, D.A. Olyanich, T.V. Utas, A.N. Mihalyuk, A.V. Zotov, A.A. Saranin. Effect of embedded Cr on the structural phase transition of In/Si(111)4×1. Surface Science, 2024, Vol.739, P.122400-6.
2022. A.Y. Tupchaya, L.V. Bondarenko, A.A. Yakovlev, Y.E. Vekovshinin, A.N. Mihalyuk, D.V. Gruznev, N.S. Denisov, A.V. Matetskiy, A.Yu. Aladyshkin, A.V. Zotov, A.A. Saranin. 2D system incorporating perforated Mg sheet sandwiched between Pb layer and Si(111). Applied Surface Science, 2022, Vol.589, P.152951-6
2020. L.V. Bondarenko, A.Y. Tupchaya, A.N. Mihalyuk, S.V. Eremeev, A.V. Matetskiy, N.V. Denisov, Y.E. Vekovshinin, A.V. Slyshkin, D.V. Gruznev, A.V. Zotov, A.A. Saranin. Fabrication and characterization of a single monolayer NiSi2 sandwiched between a Tl capping layer and a Si(111) substrate. 2D Materials, 2020, Vol. 7, No.2, P.025009-9.
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, V.G. Kotlyar, T.V. Utas, A.N. Mihalyuk, N.V. Denisov, A.V. Zotov, A.A. Saranin. Alloying with Ga promotes superconductivity in single-atomic Pb layer on Si(111). Journal of Alloys and Compounds, 2023, Vol. 969, P. 172453-5.
2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D. V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Pb/NiSi2 atomic sandwich on Si(111). Surface Science, 2022, Vol.716, P.121966-6.
2022. A.N. Mihalyuk, D.V. Gruznev, L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, S.V. Eremeev, A.V. Zotov, A.A. Saranin. 2D heavy fermion CePb3 kagome material on silicon: Emergence of unique spin polarized states for spintronics. Nanoscale, 2022, Vol.14, P.14732-14377.
2021. A.N. Mihalyuk, L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, Y.E. Vekovshinin, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. One-dimensional spin-polarized electron channel in the two-dimensional PbBi compound on silicon. Physical Review B, 2021, Vol. 104, P.125413-7.
2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, V.G. Kotlyar, T.V. Utas, A.N. Mihalyuk, A.V. Matetskiy, N.V. Denisov, A.V. Zotov, A.A. Saranin. Gold interlayer promotes superconductivity in single- and double-atomic Pb layers on Si(100). Journal of Physical Chemistry Letters, 2022, Vol.13, P.10479-10485.
2021. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D. V. Gruznev, A.N. Mihalyuk, Y.P. Ivanov, D.A. Olyanich, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Metal sheet of atomic thickness embedded in silicon. ACS Nano, 2021, Vol.15, No.12, 19357–19363.
2023. A.N. Mihalyuk, L.V. Bondarenko, A.Y. Tupchaya, Yu.E. Vekovshinin, T.V. Utas, D.V. Gruznev, Jyh-Pin Chou, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Large-scale thallene film with emergent spin-polarized states mediated by tin intercalation for spintronics applications. Materials Today Advances, 2023, Vol.18, P.100372-7.
2022. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, N.V. Denisov, A.V. Matetskiy, A.V. Zotov, A.A. Saranin. Single- and double-atomic In layers grown on top of a single-atomic-layer NiSi2 on Si(111). Physical Review B, 2022, V.106, P.035412-8.
2023. L.V. Bondarenko, A.Y. Tupchaya, Y.E. Vekovshinin, D.V. Gruznev, T.V. Utas, A.N. Mihalyuk, N.V. Denisov, A.V. Zotov, A.A. Saranin. Dense single-atomic 14×√3-reconstructed Pb layer on Si(111) with advanced structural and superconducting properties. Physical Review B, 2023, V.108, P.115428-9.
2024. A.N. Mihalyuk, Yu.E. Vekovshinin, A.Y. Tupchaya, L.V. Bondarenko, D.V. Gruznev, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Promoting spin-polarized states in Bi/Si(111) interface mediated by Ba intercalation for advanced spintronics applications. Scripta Materialia, 2024, Vol. 239, P. 115807-6.
2024. L.V. Bondarenko, A.Y. Tupchaya, T.V. Utas, Y.E. Vekovshinin, D.V. Gruznev, A.N. Mihalyuk, S.V. Eremeev, A.V. Zotov, A.A. Saranin. Atomic-scale observations of the immiscible melted metals confined in a single-atom layer. Physica Status Solidi - Rapid Research Letters, 2024, Vol,18, Iss.2, P. 2300254-5.