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005.007.01
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See Russian version.
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Postgraduate
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Междисциплинарная кафедра подготовки кадров высшей квалификации
Admission to the postgraduate
Прием в целевую аспирантуру
Список аспирантов (на 1 октября 2024 года)
anti-corruption
Ignatovich Konstantin Vikentievich
Degree:
PhD (Phys.-Math.)
Position:
senior scientific employee
Department:
Лаборатория технологии полупроводников и диэлектриков (№104)
Room:
204
Internal Phone:
3-27
Email:
ignat@iacp.dvo.ru
Publications:
2016
2015
2012
Article
Tezis
2016. 10.4028/www.scientific.net/SSP.247.73
2016.
2015. K.V. Ignatovich, A.V. Zotov, A.A. Saranin. Characterization of In/Si(111) system by optical second-harmonic generation // Proceedings of Third Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2015), Vladivostok, Russia, August 19–26, 2015. Vladivostok: Dalnauka, 2015, P.76-77
2012. K.V. Ignatovich, A.V. Zotov, A.A. Saranin. Characterization of Si(111)root3xroot3-(Au,In) surface by optical second-harmonic generation. Appl.Surf.Sci., 2012, Vol.258, Iss. 10, P.4642-4644.
2015. Characterization of In/Si(111) system by optical second-harmonic generation