ИАПУ ДВО РАН

Thickness dependence of the electrical and magnetutransport properties of magnetite films formed on oxidized silicon surface


2012

Материалы / тезисы конференций

The 10th Japan-Russia Seminar on Semiconductor Surfaces Together with Asian Countries. Abstracts.

Japan, Hongo, Tokyo, University of Tokyo

G-3

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0

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Dimitriev A. A., Vikulov V. A., Pisarenko T. A., Balashev V. V., Korobtsov V. V. Thickness dependence of the electrical and magnetutransport properties of magnetite films formed on oxidized silicon surface // The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-10), Tokyo, Japan, 2012. G-3.