ИАПУ ДВО РАН

Thickness dependence of the electrical and magnetutransport properties of magnetite films formed on oxidized silicon surface


2012

Tezis

The 10th Japan-Russia Seminar on Semiconductor Surfaces Together with Asian Countries. Abstracts.

Japan, Hongo, Tokyo, University of Tokyo

The 10th Japan-Russia Seminar on Semiconductor Surfaces Together with Asian Countries. Abstracts.

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Dimitriev A. A., Vikulov V. A., Pisarenko T. A., Balashev V. V., Korobtsov V. V. Thickness dependence of the electrical and magnetutransport properties of magnetite films formed on oxidized silicon surface // The 10th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-10), Tokyo, Japan, 2012. G-3.