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Formation and thermoelectric properties of stressed chromium disilicide nanocrystallites buried in the Si/CrSi2/Si(001) heterostructure

2015

Electronic Materials Letters, Q3

Article

Electronic Materials Letters

Springer

V.11, N.3

1.98

ISSN: 1738-8090 (print version), 2093-6788 (electronic version)

D.L. Goroshko, E.A. Chusovitin, I.M. Chernev, L. Dozsa, B. Pecz, N.G. Galkin. Formation and thermoelectric properties of stressed chromium disilicide nanocrystallites buried in the Si/CrSi2/Si(001) heterostructure // Electronic Materials Letters, V. 11, N. 3, (2015), pp. 424-428.

http://dx.doi.org/10.1007/s13391-015-4475-5