1. Главная
  2. Публикации
  3. Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications

Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications

2015

Галкин К. Н., Галкин Н. Г., Горошко Д. Л., Чернев И. М., R. Faigar, T.H. Stuchlikova, J. Stuchlok, Z. Remes

Материалы / тезисы конференций

Japanese Journal of Applied Physics Conference Proceedings

N.G. Galkin, K.N. Galkin, I.M. Chernev, R. Faigar, T.H. Stuchlikova, J. Stuchlok, Z. Remes. Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications // JJAP Conf. Proceed., 3 (2015) 011104(1-8).

V.3

The Japan Society of Applied Physics

Eng