Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications
Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications
2015
Доклады
Japanese Journal of Applied Physics Conference Proceedings
The Japan Society of Applied Physics
V.3
N.G. Galkin, K.N. Galkin, I.M. Chernev, R. Faigar, T.H. Stuchlikova, J. Stuchlok, Z. Remes. Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications // JJAP Conf. Proceed., 3 (2015) 011104(1-8).