ИАПУ ДВО РАН

Balagan Semyon Anatoljevich

Position: junior scientific employee

Department: Лаборатория функциональных материалов и систем фотоники (№24)

Room: 334

Phone: 2-32-06-82

Email: balagan@iacp.dvo.ru

Publications:

Article Tezis

2020. Goroshko D. L. et al. Formation and thermoelectric properties of the n-and p-type silicon nanostructures with embedded GaSb nanocrystals //Japanese Journal of Applied Physics. – 2020. – Т. 59. – №. SF. – С. SFFB04.
2022.
2024.
2018. Goroshko D. et al. Thermoelectric properties of nanostructured material based on Si and GaSb //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 102-109.
2015. Yu. V. Lunyakov and S. A. Balagan. Bulk moduli of the silicon and germanium fullerenes Si60 and Ge60 Physics of the Solid State, Vol. 57, No. 6, 2015, P. 1073-1078
2013. Chusovitin E. et al. Electroluminescence properties of p‐Si/β‐FeSi2 NCs/…/n‐Si mesa diodes with embedded multilayers of β‐FeSi2 nanocrystallites //physica status solidi (c). – 2013. – Т. 10. – №. 12. – С. 1850-1853.
2015. V.N. Davydova, A.V. Volod’ko, E.V. Sokolova, E.A. Chusovitin, S.A. Balagan, V.I. Gorbach, N.G. Galkin, I.M. Yermak, T.F. Solov’eva. The supramolecular structure of LPS-chitosan complexes of varied composition in relation to their biological activity // Carbohydrate Polymers, 123 (2015) 115-121.
2017. Shevlyagin A. V. et al. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μ W emission power at 1.5 μ m //Journal of Applied Physics. – 2017. – Т. 121. – №. 11. – С. 113101.
2018. Semyon A Balagan et al 2018 J. Phys.: Condens. Matter 30 245301
2017. Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ε-FeSi nanocrystals is formed on the surface, sometimes β and ε phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ε-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2_NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 µW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.
2014. Soluble Chitosan-Carrageenan Polyelectrolyte Complexes and Their Gastroprotective Activity