The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier


2014

Балашев В. В., Коробцов В. В., Volkov N.V., Tarasov A.S., Smolyakov D.A., Gustaitsev A.O.

Статьи в журналах

Applied Physics Letters

USA, New York, AIP Publishing LLC

Vol.104, (2014) pp.222406

pp. 5

3.794

0

0003-6951, e- 1077-3118

Volkov N.V., Tarasov A.S., Smolyakov D.A., Gustaitsev A.O., Balashev V.V., Korobtsov V.V. The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier // Appl. Phys. Lett. V.104, (2014) 222406-(1-5)

http://dx.doi.org/10.1063/1.4881715