Formation and thermoelectric properties of stressed chromium disilicide nanocrystallites buried in the Si/CrSi2/Si(001) heterostructure


2015

Галкин Н. Г., Горошко Д. Л., Чернев И. М., Чусовитин Е. А., L. Dozsa, B. Pecz

Статьи в журналах

Electronic Materials Letters

Springer

V.11, N.3

pp.424-428

1.98

ISSN: 1738-8090 (print version), 2093-6788 (electronic version)

D.L. Goroshko, E.A. Chusovitin, I.M. Chernev, L. Dozsa, B. Pecz, N.G. Galkin. Formation and thermoelectric properties of stressed chromium disilicide nanocrystallites buried in the Si/CrSi2/Si(001) heterostructure // Electronic Materials Letters, V. 11, N. 3, (2015), pp. 424-428.

http://dx.doi.org/10.1007/s13391-015-4475-5