Галкин Н. Г., Чернев И. М., Шевлягин А. В., Андрей Герасименко, Антон Гутаковский, Terai Yoshikazu, Hoshida Hirofumi, Naofumi Nishikawa, Keisuke Ohdaira
Статьи в журналах
Netherlands, Amsterdam, Elsevier
Shevlyagin et al. Solar Energy, 211 (2020) 383-395
A. Shevlyagin, I. Chernev. N. Galkin, A. Gerasimenko, A. Gutakovskii, H. Hoshida, Y. Terai, N. Nishikawa, K. Ohdaira. Probing the Mg2Si/Si (1 1 1) heterojunction for photovoltaic applications // Solar Energy. – 2020. – Т. 211. – С. 383-395.
n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demonstrated clear rectification and zero bias photoresponse in the (400–1400) nm wavelength range at room temperature. Under AM 1.5 illumination, an open-circuit voltage of 0.21 V, a short-circuit current density of 3.3 mA/cm2, fill factor of 0.36 were obtained while the conversion efficiency reached 0.24%, which is the pioneering demonstration of Mg2Si-based solar cell operation. Combined minority-carrier lifetime, Raman and AFM mapping together with TEM and XRD data revealed that carrier dynamics and photovoltaic performance are limited by the presence of non-epitaxial Mg2Si grains in the upper silicide film layer. However, minority-carrier lifetime up to 7.3 µs for Mg2Si demonstrates its great potential as absorbing material for Si-based solar cells.