Галкин К. Н., Галкин Н. Г., Горошко Д. Л., Субботин Е. Ю., Чусовитин Е. А.
Статьи в журналах
Galkin N. G. et al. Multilayer Heterostructures with Embedded CrSi2 and β-FeSi2 Nanocrystals on Si (111) Substrate: From the Formation to Photoelectric Properties //Solid State Phenomena. – Trans Tech Publications Ltd, 2020. – Т. 312. – С. 45-53.
The studies are devoted to the development of the technology of multilayer incorporation of nanocrystals (NCs) of semiconductor chromium and iron disilicides with a layer density no less than 2x1010 cm-2, the establishment of the growth mechanism of heterostructures with two types of NCs, the determination of their crystalline quality and optical properties, as well as the creation and study of rectification and photoelectric properties of p-i-n diodes based on them. Morphologically smooth heterostructures with 6 embedded layers of CrSi2 nanocrystals and two types of embedded nanocrystals (with 4 layers of CrSi2 NCs and 2 layers of β-FeSi2 NCs) for optical studies and built-in silicon p-i-n diodes were grown for the first time. The possibility of optical identification of interband transitions in embedded nanocrystals in the photon energy range of 1.2 - 2.5 eV was determined from the reflection spectra and the strongest peaks in reflection from the integrated nanocrystals were determined: 2.0 eV for CrSi2 NCs and 1.75 eV for β-FeSi2 NCs. The created p-i-n diodes have a contact potential difference of 0.95 V, regardless of the type of embedded NCs. At 80 K, an absorption band (0.7 - 1.1 eV) was detected in the diodes, which was associated with carrier photo generation in the embedded CrSi2 and β-FeSi2 NCs. From the spectra of the photoresponse at 80 K, the band gap widths in the NCs were determined: 0.50 eV in CrSi2 and 0.70 eV in the superposition of the CrSi2 and β-FeSi2 NCs.