Electroluminescent 1.5-μm light-emitting diodes based on p +-Si/NC β-FeSi2/n-Si structures


2015

Chusovitin E. A., Galkin N. G., Goroshko D. L., Saranin A. A., Shevlyagin A. V., T.S. Shamirzaev, A.K. Gutakovski, A.V. Latyshev

Article

Semiconductors

Pleiades Publishing, Ltd.

V.49, N.4

pp.508-512

0.739

0015-3222 (рус), 1063-7826 (eng)

T.S. Shamirzaev, N.G. Galkin, E.A. Chusovitin, D.L. Goroshko, A.V. Shevlyagin, A.K. Gutakovski, A.A. Saranin, A.V. Latyshev. Electroluminescent 1.5-μm light-emitting diodes based on p +-Si/NC β-FeSi2/n-Si structures // Semiconductors, V.49, N.4 (2015) pp.508-512.

Рус
Eng