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Postgraduate
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Междисциплинарная кафедра подготовки кадров высшей квалификации
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Комиссия по соблюдению требований к служебному поведению и урегулированию конфликта интересов
Обратная связь для сообщений о фактах коррупции
Dotsenko Sergey Andreevich
Degree:
PhD (Phys.-Math.)
Position:
scientific employee
Department:
Лаборатория оптики и электрофизики (№105)
Room:
329
Phone:
2-32-06-82
Internal Phone:
2-68
Email:
docenko@iacp.dvo.ru
Publications:
2020
2019
2018
2017
2015
2013
Article
Chapter
Tezis
2015. N. G. Galkin, D. A. Bezbabnyi, K. N. Galkin, S. A. Dotsenko, I. M. Chernev, and A. V. Vakhrushev. Chapter 15: “Formation, Optical and Electrical Properties of Ca3Si4 Films and Si/Ca3Si4/Si(111) Double Heterostructures” in the book “Multifunctional Materials and Modeling”, Editors: M.A. Korepanov, A.M. Lipanov, 06/2015: chapter 15: pages 141-150; Apple Academic Press., ISBN: 9781771880879.
2017. Galkin N. G. et al. Study of optical and luminescence properties of silicon—semiconducting silicide—silicon multilayer nanostructures //EPJ Web of Conferences. – EDP Sciences, 2017. – Т. 132. – С. 02006.
2017. Shevlyagin A. V. et al. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μ W emission power at 1.5 μ m //Journal of Applied Physics. – 2017. – Т. 121. – №. 11. – С. 113101.
2019.
2017. Chusovitin E. A. et al. GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon //Scripta Materialia. – 2017. – Т. 136. – С. 83-86.
2015. Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
2017. Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ε-FeSi nanocrystals is formed on the surface, sometimes β and ε phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ε-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2_NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 µW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.
2018. Chusovitin E. et al. Formation of a thin continuous GaSb film on Si (001) by solid phase epitaxy //nanomaterials. – 2018. – Т. 8. – №. 12. – С. 987.
2017. Goroshko D. L. et al. Photoluminescence spectroscopy investigation of epitaxial Si/GaSb nanocrystals/Si heterostructure //AIP Conference Proceedings. – AIP Publishing LLC, 2017. – Т. 1874. – №. 1. – С. 030015.
2018. Goroshko D. et al. Thermoelectric properties of nanostructured material based on Si and GaSb //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 102-109.
2013. Gouralnik A. S. et al. Brief observe on iron silicide growth on amorphous silicon //Physica status solidi (c). – 2013. – Т. 10. – №. 12. – С. 1742-1745.
2019. Galkin N. G. et al. Conductive CaSi2 transparent in the near infra-red range //Journal of Alloys and Compounds. – 2019. – Т. 770. – С. 710-720.
2017. -
2018. Gouralnik A. S. et al. Formation of Mg2Si at high temperatures by fast deposition of Mg on Si (111) with wedge-shaped temperature distribution //Applied Surface Science. – 2018. – Т. 439. – С. 282-284.
2020. Goroshko D. L. et al. Formation and thermoelectric properties of the n-and p-type silicon nanostructures with embedded GaSb nanocrystals //Japanese Journal of Applied Physics. – 2020. – Т. 59. – №. SF. – С. SFFB04.
2019. Chusovitin E. et al. Embedding of iron silicide nanocrystals into monocrystalline silicon: suppression of emersion effect //Asia-Pacific Conference on Fundamental Problems of Opto-and Microelectronics 2017. – International Society for Optics and Photonics, 2019. – Т. 11024. – С. 1102402.