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Междисциплинарная кафедра подготовки кадров высшей квалификации
Admission to the postgraduate
Список аспирантов (на 1 сентября 2022 года)
Chernev Igor Mikhailovich
Лаборатория оптики и электрофизики (№105)
2022. N.G. Galkin, K.N. Galkin, A.V. Tupkalo, E.Yu. Subbotin, I.M. Chernev, A.V. Shevlyagin and V.V. Khovailo, Physics of the Solid State, 2022, Vol. 64, No. 12, pp. 616–623
2016. Chernev I. M. et al. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg2Si thin film //Applied Physics Letters. – 2016. – Т. 109. – №. 4. – С. 043902.
2020. Terai Y. et al. Photoreflectance Spectra of Highly-oriented Mg 2 Si (111)//Si (111) Films //JJAP Conference Proceedings. – The Japan Society of Applied Physics, 2020. – Т. 8. - 011004
2020. n-Mg2Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped (n = 3 × 1017 cm−3) silicide epitaxial layer on p-Si(1 1 1) (p = 5 × 1014 cm−3) was grown by low temperature (250 °C) molecular beam epitaxy. Heterojunction demonstrated clear rectification and zero bias photoresponse in the (400–1400) nm wavelength range at room temperature. Under AM 1.5 illumination, an open-circuit voltage of 0.21 V, a short-circuit current density of 3.3 mA/cm2, fill factor of 0.36 were obtained while the conversion efficiency reached 0.24%, which is the pioneering demonstration of Mg2Si-based solar cell operation. Combined minority-carrier lifetime, Raman and AFM mapping together with TEM and XRD data revealed that carrier dynamics and photovoltaic performance are limited by the presence of non-epitaxial Mg2Si grains in the upper silicide film layer. However, minority-carrier lifetime up to 7.3 µs for Mg2Si demonstrates its great potential as absorbing material for Si-based solar cells.
2015. H.A. Novikov, R.I. Batalov, R.M. Bayazitov, I.A. Faizrakhmanov, N.M. Lyadov, V.A. Shustov, K.N. Galkin, N.G. Galkin, I.M. Chernev, G.D. Ivlev, S.L. Prokop’ev, P.I. Gaiduk. Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties / Semiconductors, Volume 49, Issue 6, (2015), pp.729-735.
2015. Non-doped and doped Mg stannide films on Si(111) substrates: Formation, optical, and electrical properties
2015. N.G. Galkin, K.N. Galkin, I.M. Chernev, R. Faigar, T.H. Stuchlikova, J. Stuchlok, Z. Remes. Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications // JJAP Conf. Proceed., 3 (2015) 011104(1-8).
2021. Nanocrystalline CaSi films with a thickness of 80 to 130 nm were grown on high-resistance silicon substrates with the (111) and (100) orientations by low-temperature (190-330 °C) molecular-beam epitaxy and low-temperature (330 °C) solid-phase epitaxy, for which studied the micro-structure, phase composition and crystal structure. It was found that polycrystalline, nanocrystalline (NC) and amorphous films of CaSi and CaSi2 were first detected by the dominant contribution of holes in the range 1.4-300 K. In magnetic fields of 1-4 T and at temperatures of 40-100 K, a giant linear magnetoresistive effect (up to 500 %). In CaSi2 films with the contribution of the second phase (CaSi), a peak at temperatures of 100-200 K was found on the temperature dependences of the resistivity and Hall coefficient, which corresponds to a phase transition. Additionally, in this film, a transition from positive to negative MRE was found at T=120-200 K. This effect was not detected in a single-phase CaSi2 film that corresponds to a certain rearrangement in the magnetic field of carrier fluxes only in a two-phase system. The study of thermoelectric properties of CaSi and CaSi2 films showed that the semimetallic type of conductivity in them leads to the independence of the positive Seebeck coefficient at T=330-450 K. It was found that the maximum contribution to the Seebeck coefficient and power factor is observed in an amorphous CaSi film in the presence of a certain fraction of the NC Ca2Si phase. In single-phase CaSi2 films, a twofold decrease in the Seebeck coefficient and power factor is observed due to an increase in the hole concentration in comparison with CaSi films.
2018. Gouralnik A. S. et al. Formation of Mg2Si at high temperatures by fast deposition of Mg on Si (111) with wedge-shaped temperature distribution //Applied Surface Science. – 2018. – Т. 439. – С. 282-284.
2016. Goroshko D. L. et al. Formation of bulk and nanocrystallite layers of GaSb on silicon //Solid State Phenomena. – Trans Tech Publications Ltd, 2016. – Т. 245. – С. 72-79.
2016. Goroshko D. L. et al. Extended near-IR spectral sensitivity and electroluminescence properties of silicon diode structure with GaSb/Si composite layer //Solid State Phenomena. – Trans Tech Publications Ltd, 2016. – Т. 247. – С. 61-65.
2015. Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
2017. Galkin N. G. et al. Study of optical and luminescence properties of silicon—semiconducting silicide—silicon multilayer nanostructures //EPJ Web of Conferences. – EDP Sciences, 2017. – Т. 132. – С. 02006.
2015. N. G. Galkin, D. A. Bezbabnyi, K. N. Galkin, S. A. Dotsenko, I. M. Chernev, and A. V. Vakhrushev. Chapter 15: “Formation, Optical and Electrical Properties of Ca3Si4 Films and Si/Ca3Si4/Si(111) Double Heterostructures” in the book “Multifunctional Materials and Modeling”, Editors: M.A. Korepanov, A.M. Lipanov, 06/2015: chapter 15: pages 141-150; Apple Academic Press., ISBN: 9781771880879.
2021. Gouralnik, A. S., Shevlyagin, A. V., Chernev, I. M., Ustinov, A. Y., Gerasimenko, A. V., & Gutakovskii, A. K.. Synthesis of crystalline Mg2Si films by ultrafast deposition of Mg on Si (111) and Si (001) at high temperatures. Mg/Si intermixing and reaction mechanisms //Materials Chemistry and Physics. – 2021. – T.258. - С. 123903.
2017. Goroshko D. L. et al. Solid phase epitaxy formation of silicon-GaSb based heterostructures //JJAP Conference Proceedings. – The Japan Society of Applied Physics, 2016. – Т. 5.
2015. N.G. Galkin, K.N. Galkin, I.M. Chernev, A.V. Shevlyagin, T.H. Stuchlikova, J. Stuchlik, Z. Remes. Mg2Si, Ca2Si and CrSi2 nanoparticles for solar cells and light emitted diodes based on hydrogenated amorphous silicon on glass substrates // Physics, Chemistry and Application of Nanostructures, NANOMEETING, 2015, 07-06, pp. 532-535.
2015. D.L. Goroshko, E.A. Chusovitin, I.M. Chernev, L. Dozsa, B. Pecz, N.G. Galkin. Formation and thermoelectric properties of stressed chromium disilicide nanocrystallites buried in the Si/CrSi2/Si(001) heterostructure // Electronic Materials Letters, V. 11, N. 3, (2015), pp. 424-428.