ИАПУ ДВО РАН

Чернев Игорь Михайлович

Должность: научный сотрудник

Подразделение: Лаборатория оптики и электрофизики (№105)

Внутр. телефон: 2-30

Email: Chernev@iacp.dvo.ru

Публикации:

Материалы / тезисы конференций Статьи / главы в тематических сборниках Статьи в журналах

2018. Gouralnik A. S. et al. Formation of Mg2Si at high temperatures by fast deposition of Mg on Si (111) with wedge-shaped temperature distribution //Applied Surface Science. – 2018. – Т. 439. – С. 282-284.
2015. D.L. Goroshko, E.A. Chusovitin, I.M. Chernev, L. Dozsa, B. Pecz, N.G. Galkin. Formation and thermoelectric properties of stressed chromium disilicide nanocrystallites buried in the Si/CrSi2/Si(001) heterostructure // Electronic Materials Letters, V. 11, N. 3, (2015), pp. 424-428.
2015. N.G. Galkin, K.N. Galkin, I.M. Chernev, A.V. Shevlyagin, T.H. Stuchlikova, J. Stuchlik, Z. Remes. Mg2Si, Ca2Si and CrSi2 nanoparticles for solar cells and light emitted diodes based on hydrogenated amorphous silicon on glass substrates // Physics, Chemistry and Application of Nanostructures, NANOMEETING, 2015, 07-06, pp. 532-535.
2016. Goroshko D. L. et al. Formation of bulk and nanocrystallite layers of GaSb on silicon //Solid State Phenomena. – Trans Tech Publications Ltd, 2016. – Т. 245. – С. 72-79.
2016. Chernev I. M. et al. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg2Si thin film //Applied Physics Letters. – 2016. – Т. 109. – №. 4. – С. 043902.
2016. Goroshko D. L. et al. Extended near-IR spectral sensitivity and electroluminescence properties of silicon diode structure with GaSb/Si composite layer //Solid State Phenomena. – Trans Tech Publications Ltd, 2016. – Т. 247. – С. 61-65.
2022. N.G. Galkin, K.N. Galkin, A.V. Tupkalo, E.Yu. Subbotin, I.M. Chernev, A.V. Shevlyagin and V.V. Khovailo / Conduction Mechanisms and Thermoelectric Properties of Semimetallic CaSi and CaSi2 Films on Si(100) and Si(111) Substrates // Physics of the Solid State, 2022, Vol. 64, No. 12, pp. 616–623
2017. Galkin N. G. et al. Study of optical and luminescence properties of silicon—semiconducting silicide—silicon multilayer nanostructures //EPJ Web of Conferences. – EDP Sciences, 2017. – Т. 132. – С. 02006.
2021. Механизмы проводимости и термоэлектрические свойства полуметаллических пленок CASI и CASI2 на подложках Si(100) и Si(111) / Н. Г. Галкин, К. Н. Галкин, А. В. Тупкало [и др.] // Химическая физика и мезоскопия. – 2021. – Т. 23. – № 2. – С. 165-175.
2015. Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
2015. Новиков Г.А., Баталов Р.И., Баязитов Р.М., Файзрахманов И.А., Лядов Н.М., Шустов В.А., Галкин К.Н., Галкин Н.Г., Чернев И.М., Ивлев Г.Д., Прокопьев С.Л., Гайдук П.И. Импульсная модификация пленок германия на подложках кремния, сапфира и кварца: структура и оптические свойства // ФТП, т. 49, вып. 6., 2015, с. 746-752.
2015. N. G. Galkin, D. A. Bezbabnyi, K. N. Galkin, S. A. Dotsenko, I. M. Chernev, and A. V. Vakhrushev. Chapter 15: “Formation, Optical and Electrical Properties of Ca3Si4 Films and Si/Ca3Si4/Si(111) Double Heterostructures” in the book “Multifunctional Materials and Modeling”, Editors: M.A. Korepanov, A.M. Lipanov, 06/2015: chapter 15: pages 141-150; Apple Academic Press., ISBN: 9781771880879.
2020. A. Shevlyagin, I. Chernev. N. Galkin, A. Gerasimenko, A. Gutakovskii, H. Hoshida, Y. Terai, N. Nishikawa, K. Ohdaira. Probing the Mg2Si/Si (1 1 1) heterojunction for photovoltaic applications // Solar Energy. – 2020. – Т. 211. – С. 383-395.
2020. Terai Y. et al. Photoreflectance Spectra of Highly-oriented Mg 2 Si (111)//Si (111) Films //JJAP Conference Proceedings. – The Japan Society of Applied Physics, 2020. – Т. 8. - 011004
2015. N.G. Galkin, K.N. Galkin, I.M. Chernev, R. Faigar, T.H. Stuchlikova, J. Stuchlok, Z. Remes. Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications // JJAP Conf. Proceed., 3 (2015) 011104(1-8).
2015. Non-doped and doped Mg stannide films on Si(111) substrates: Formation, optical, and electrical properties
2021. Gouralnik A. S., Shevlyagin A. V., Chernev I. M., Ustinov A. Y., Gerasimenko A. V., Gutakovskii, A. K. Synthesis of crystalline Mg2Si films by ultrafast deposition of Mg on Si (111) and Si (001) at high temperatures. Mg/Si intermixing and reaction mechanisms // Materials Chemistry and Physics. 2021. Vol. 258. Article number 123903.
2017. Goroshko D. L. et al. Solid phase epitaxy formation of silicon-GaSb based heterostructures //JJAP Conference Proceedings. – The Japan Society of Applied Physics, 2016. – Т. 5.