Galkin Konstantin Nickolaevich

• 2022. N.G. Galkin, K.N. Galkin, A.V. Tupkalo, E.Yu. Subbotin, I.M. Chernev, A.V. Shevlyagin and V.V. Khovailo, Physics of the Solid State, 2022, Vol. 64, No. 12, pp. 616–623
• 2015. N.G. Galkin, K.N. Galkin, I.M. Chernev, R. Faigar, T.H. Stuchlikova, J. Stuchlok, Z. Remes. Formation and properties of p-i-n diodes based on hydrogenated amorphous silicon with embedded CrSi2, Mg2Si and Ca2Si nanocrystallites for energy conversion applications // JJAP Conf. Proceed., 3 (2015) 011104(1-8).
• 2015. H.A. Novikov, R.I. Batalov, R.M. Bayazitov, I.A. Faizrakhmanov, N.M. Lyadov, V.A. Shustov, K.N. Galkin, N.G. Galkin, I.M. Chernev, G.D. Ivlev, S.L. Prokop’ev, P.I. Gaiduk. Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties / Semiconductors, Volume 49, Issue 6, (2015), pp.729-735.
• 2015. N. G. Galkin, D. A. Bezbabnyi, K. N. Galkin, S. A. Dotsenko, I. M. Chernev, and A. V. Vakhrushev. Chapter 15: “Formation, Optical and Electrical Properties of Ca3Si4 Films and Si/Ca3Si4/Si(111) Double Heterostructures” in the book “Multifunctional Materials and Modeling”, Editors: M.A. Korepanov, A.M. Lipanov, 06/2015: chapter 15: pages 141-150; Apple Academic Press., ISBN: 9781771880879.
• 2017. Galkin N. G. et al. Study of optical and luminescence properties of silicon—semiconducting silicide—silicon multilayer nanostructures //EPJ Web of Conferences. – EDP Sciences, 2017. – Т. 132. – С. 02006.
• 2016. Галкин Н. Г. и др. Кремний-силицидные диодные гетероструктуры-основа для создания кремниевой интегральной фотоники //Вестник Дальневосточного отделения Российской академии наук. – 2016. – №. 4 (188).
• 2022.
• 2021. Galkin N. G. et al. Multilayer Heterostructures with Embedded CrSi2 and β-FeSi2 Nanocrystals on Si (111) Substrate: From the Formation to Photoelectric Properties //Solid State Phenomena. – Trans Tech Publications Ltd, 2020. – Т. 312. – С. 45-53.
• 2018. Gouralnik A. S. et al. Formation of Mg2Si at high temperatures by fast deposition of Mg on Si (111) with wedge-shaped temperature distribution //Applied Surface Science. – 2018. – Т. 439. – С. 282-284.
• 2017. Goroshko D. L. et al. Solid phase epitaxy formation of silicon-GaSb based heterostructures //JJAP Conference Proceedings. – The Japan Society of Applied Physics, 2016. – Т. 5.
• 2017. Shevlyagin A. V. et al. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μ W emission power at 1.5 μ m //Journal of Applied Physics. – 2017. – Т. 121. – №. 11. – С. 113101.
• 2016. Chernev I. M. et al. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg2Si thin film //Applied Physics Letters. – 2016. – Т. 109. – №. 4. – С. 043902.
• 2018. Chusovitin E. et al. Formation of a thin continuous GaSb film on Si (001) by solid phase epitaxy //nanomaterials. – 2018. – Т. 8. – №. 12. – С. 987.
• 2016. Goroshko D. L. et al. Extended near-IR spectral sensitivity and electroluminescence properties of silicon diode structure with GaSb/Si composite layer //Solid State Phenomena. – Trans Tech Publications Ltd, 2016. – Т. 247. – С. 61-65.
• 2015. N.G. Galkin, K.N. Galkin, I.M. Chernev, A.V. Shevlyagin, T.H. Stuchlikova, J. Stuchlik, Z. Remes. Mg2Si, Ca2Si and CrSi2 nanoparticles for solar cells and light emitted diodes based on hydrogenated amorphous silicon on glass substrates // Physics, Chemistry and Application of Nanostructures, NANOMEETING, 2015, 07-06, pp. 532-535.
• 2015. Shevlyagin A. V. et al. Enhancement of the Si pn diode NIR photoresponse by embedding β-FeSi 2 nanocrystallites //Scientific reports. – 2015. – Т. 5. – №. 1. – С. 1-9.
• 2020.
• 2019. Galkin N. G. et al. Silicon p+–p−–n Diodes with Embedded β-FeSi2 and CrSi2 Nanocrystals: Morphology, Crystal Structure and Photoelectric Properties //International Journal of Nanoscience. – 2019. – Т. 18. – №. 03n04. – С. 1940084.
• 2015. Galkin N. G. et al. Semiconducting Mg2Sn and Mg2Ge nanolayers on Si (111) substrates: formation, structure and properties //PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: PROCEEDINGS OF INTERNATIONAL CONFERENCE NANOMEETING–2015. – 2015. – С. 128-131.
• 2022. Transparent conducting materials (TCMs) provide low cost and effective solution for the modern optoelectronics. However, simultaneous high electrical conductivity and optical transparency in the near-infrared (NIR) and middle-infrared (MIR) spectral ranges remain challenging. This study proposes thin film of the semimetal calcium disilicide (CaSi2) with hR6 polymorph modification to fill this niche. Investigation of the electrical, magnetoresistance and magnetic properties shed light on its semimetal behavior. CaSi2 film grown on Si substrate demonstrates competitive electrical and optical properties from the NIR to MIR ranges compared to commonly used TCMs reaching maximum transmittance of 47% at an important telecommunication wavelength of 1550 nm in addition to the low sheet resistance of 6.6 Ω/sq, which results in high TCM figure of merit of 0.2 Ω−1. Moreover, demonstrated for the first time partial optical transparency of the CaSi2 in the visible range could significantly heighten its applicability for Si-based optoelectronics.
• 2015. Non-doped and doped Mg stannide films on Si(111) substrates: Formation, optical, and electrical properties
• 2018. Goroshko D. et al. Thermoelectric properties of nanostructured material based on Si and GaSb //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 102-109.
• 2019. Galkin N. G. et al. Conductive CaSi2 transparent in the near infra-red range //Journal of Alloys and Compounds. – 2019. – Т. 770. – С. 710-720.
• 2017. Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ε-FeSi nanocrystals is formed on the surface, sometimes β and ε phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ε-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2_NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 µW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.
• 2017. Galkin N. G. et al. Prospects for silicon–silicide integrated photonics //Japanese Journal of Applied Physics. – 2017. – Т. 56. – №. 5S1. – С. 05DA01.
• 2021. Nanocrystalline CaSi films with a thickness of 80 to 130 nm were grown on high-resistance silicon substrates with the (111) and (100) orientations by low-temperature (190-330 °C) molecular-beam epitaxy and low-temperature (330 °C) solid-phase epitaxy, for which studied the micro-structure, phase composition and crystal structure. It was found that polycrystalline, nanocrystalline (NC) and amorphous films of CaSi and CaSi2 were first detected by the dominant contribution of holes in the range 1.4-300 K. In magnetic fields of 1-4 T and at temperatures of 40-100 K, a giant linear magnetoresistive effect (up to 500 %). In CaSi2 films with the contribution of the second phase (CaSi), a peak at temperatures of 100-200 K was found on the temperature dependences of the resistivity and Hall coefficient, which corresponds to a phase transition. Additionally, in this film, a transition from positive to negative MRE was found at T=120-200 K. This effect was not detected in a single-phase CaSi2 film that corresponds to a certain rearrangement in the magnetic field of carrier fluxes only in a two-phase system. The study of thermoelectric properties of CaSi and CaSi2 films showed that the semimetallic type of conductivity in them leads to the independence of the positive Seebeck coefficient at T=330-450 K. It was found that the maximum contribution to the Seebeck coefficient and power factor is observed in an amorphous CaSi film in the presence of a certain fraction of the NC Ca2Si phase. In single-phase CaSi2 films, a twofold decrease in the Seebeck coefficient and power factor is observed due to an increase in the hole concentration in comparison with CaSi films.
• 2022.
• 2020. Goroshko D. L. et al. Formation and thermoelectric properties of the n-and p-type silicon nanostructures with embedded GaSb nanocrystals //Japanese Journal of Applied Physics. – 2020. – Т. 59. – №. SF. – С. SFFB04.
• 2015. Alexander Shevlyagin, Dmitry Goroshko, Evgeniy Chusovitin, Konstantin Galkin, and Nikolay Galkin. Characterization of the silicon/β-FeSi2 nanocrystallites heterostructures for the NIR photodetection at low temperature // JJAP, V.54, 07JB02 (2015)
• 2018. Galkin N. G. et al. Comparison of the structural, optical and thermoelectrical properties of Ca silicide films with variable composition on Si substrates //Defect and Diffusion Forum. – Trans Tech Publications Ltd, 2018. – Т. 386. – С. 3-8.
• 2016. Goroshko D. L. et al. Formation of bulk and nanocrystallite layers of GaSb on silicon //Solid State Phenomena. – Trans Tech Publications Ltd, 2016. – Т. 245. – С. 72-79.